Characterization of field stitching in e-beam lithography using moiré metrology

Authors

Thomas E. Murphy, tem@umd.edu
Mark K. Mondol, mondol@nano.mit.edu
Henry I. Smith, hismith@nano.mit.edu

Abstract

We describe a novel method for characterizing field-stitching in e-beam lithography systems. The method, which is based upon the moiré principle, enables one to measure interfield stitching errors to the nanometer level using only a conventional optical microscope. The technique is more sensitive than the commonly used vernier method, and it does not require the use of a coordinate-measuring tool. Our experiments show that this technique can determine the interfield stitching to within 2 nm.

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Summary Abstract Submitted to EIPBN Conference, 2000
abstract.pdf (PDF format, 482 kB)
Poster Presented at Conference
poster.pdf (PDF format, 1392 kB)
J. Vac. Sci. Technol. B, 18 (6), 3287-3291 (2000).
moire-stitching.pdf (PDF format, 385 kB)

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