Fabrication of 200 nm period nanomagnet arrays using interference lithography and a negative resist

Published/Posted: November 1, 1999

Authors: Farhoud, M.; Ferrera, J.; Lochtefeld, A. J.; Murphy, T. E.; Schattenburg, M. L.; Carter, J.; Ross, C. A.; Smith, H. I.

DOI: 10.1116/1.590976

Abstract: Magnetic information storage density has increased at the rate of 60% per year for the past seven years. There is wide agreement that continuation of this trend beyond the physical limits of the continuous thin-film media currently used will likely require a transition to discrete, lithographically defined magnetic pillars. Interference lithography (IL) appears to be the most cost-effective means of producing two-dimensional arrays of such pillars. IL can rapidly expose large areas with relatively simple equipment, without the need for a mask, and with fine control of the ratio of pillar diameter to period. We show that negative-tone imaging yields three times the contrast of positive-tone imaging for the generation of holes in photoresist, suitable for subsequent deposition or electroplating of magnetic material. We use a negative i-line, chemically-amplified resist (OHKA THMR-iN PS1) to form 200 nm period arrays of magnetic dots in Co and Ni. Such arrays, with a variety of well controlled diameters, are used to study the effect of particle size on magnetic behavior.

M. Farhoud, J. Ferrera, A. J. Lochtefeld, T. E. Murphy, M. L. Schattenburg, J. Carter, C. A. Ross and H. I. Smith, "Fabrication of 200 nm period nanomagnet arrays using interference lithography and a negative resist", J. Vac. Sci. Technol. B 17(6) 3182-3185 (1999)
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Manuscript: Farhoud_JVSTB_17_3182_1999.pdf

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