Published/Posted: November 1, 2000
Authors: Murphy, T. E.; Mondol, M. K.; Smith, H. I.
DOI: 10.1116/1.1313573Abstract: We describe a method for characterizing field stitching in e-beam lithography systems. The method, which is based upon the moiré principle, enables one to measure interfield stitching errors to the nanometer level using only a conventional optical microscope. The technique is more sensitive than the commonly used vernier method, and it does not require the use of a coordinate-measuring tool. Our experiments show that this technique can determine the interfield stitching to within 2 nm.
T. E. Murphy, M. K. Mondol and H. I. Smith, "Characterization of field stitching in electron-beam lithography using moiré metrology", J. Vac. Sci. Technol. B 18(6) 3287-3291 (2000)
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